7 kV/16.5 mΩ·cm <sup>2</sup> E-mode active-passivation p-GaN gate HEMT exceeding SiC unipolar limit
2025 · Semiconductor Science and Technology · 0 citations
https://doi.org/10.1088/1361-6641/ae14a4
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82
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Junjie Yang is an academic researcher from Electric Power University. The author has contributed to research in topics: GaN-based semiconductor devices and materials & Silicon Carbide Semiconductor Technologies & Semiconductor materials and devices. The author has an h-index of 14, co-authored 70 publications.
ORCID: 0000-0003-3614-7306Click to start Chat