Graphene Based Sensor for Environmental Monitoring of NO 2
2015 · Procedia Engineering · 41 citations
https://doi.org/10.1016/j.proeng.2015.08.731
С
С. В. Новиков
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С. В. Новиков is an academic researcher from University of Nottingham. The author has contributed to research in topics: GaN-based semiconductor devices and materials & Semiconductor Quantum Structures and Devices & Semiconductor materials and devices. The author has an h-index of 37, co-authored 522 publications.
ORCID: 0000-0002-3725-2565Papers by this author
worksNovel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth
2016 · Journal of Crystal Growth · 12 citations
https://doi.org/10.1016/j.jcrysgro.2016.12.025
Correction: Corrigendum: Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy
2017 · Scientific Reports · 4 citations
https://doi.org/10.1038/srep46799
Tellurium n-type doping of highly mismatched amorphous GaN1−As alloys in plasma-assisted molecular beam epitaxy
2014 · Journal of Crystal Growth · 3 citations
https://doi.org/10.1016/j.jcrysgro.2014.06.042
Defect-induced doping and chemisorption of O<sub>2</sub> in Se deficient GaSe monolayers
2024 · 2D Materials · 2 citations
https://doi.org/10.1088/2053-1583/ad9d57
Cathodoluminescence studies of sp2-hybridized BN thin films and monolayers grown by vapor phase epitaxy
2025 · 0 citations
https://doi.org/10.1117/12.3063484
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