Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth
2016 · Journal of Crystal Growth · 12 citations
https://doi.org/10.1016/j.jcrysgro.2016.12.025
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18
Papers
125
Citations
9
h-index
7
i10-index
Hongtu Qian is an academic researcher from ON Semiconductor (China). The author has contributed to research in topics: GaN-based semiconductor devices and materials & Semiconductor materials and devices & Ga2O3 and related materials. The author has an h-index of 9, co-authored 16 publications.
ORCID: 0000-0003-4597-6325https://doi.org/10.1016/j.jcrysgro.2016.12.025
https://doi.org/10.1016/j.pedc.2024.100065
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