Correction: Corrigendum: Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy
2017 · Scientific Reports · 4 citations
https://doi.org/10.1038/srep46799
T
Tin S. Cheng
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40
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14
h-index
19
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Tin S. Cheng is an academic researcher from University of Nottingham. The author has contributed to research in topics: Graphene research and applications & 2D Materials and Applications & Diamond and Carbon-based Materials Research. The author has an h-index of 14, co-authored 34 publications.
Papers by this author
worksDefect-induced doping and chemisorption of O<sub>2</sub> in Se deficient GaSe monolayers
2024 · 2D Materials · 2 citations
https://doi.org/10.1088/2053-1583/ad9d57
Cathodoluminescence studies of sp2-hybridized BN thin films and monolayers grown by vapor phase epitaxy
2025 · 0 citations
https://doi.org/10.1117/12.3063484
Optically detected magnetic resonance of wafer-scale hexagonal boron nitride thin films
2025 · Materials for Quantum Technology · 0 citations
https://doi.org/10.1088/2633-4356/ae1edf
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