Numerical analysis approach to thermal stress effects on dislocation behavior due to incomplete seeding in Czochralski (CZ) silicon crystal growth
2025 · Japanese Journal of Applied Physics · 0 citations
https://doi.org/10.35848/1347-4065/adff8c
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26
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194
Citations
10
h-index
10
i10-index
Takeshi Hoshikawa is an academic researcher from Shinshu University. The author has contributed to research in topics: Silicon and Solar Cell Technologies & Semiconductor materials and interfaces & Glass properties and applications. The author has an h-index of 10, co-authored 23 publications.
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