Enhanced electrical behavior from the galvanic effect in Ag-Cu alloy electrode conductive bridging resistive switching memory
2018 · Applied Physics Letters · 34 citations
https://doi.org/10.1063/1.5023527
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Xiaohua Ma
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Xiaohua Ma is an academic researcher from Xidian University. The author has contributed to research in topics: GaN-based semiconductor devices and materials & Ga2O3 and related materials & Semiconductor materials and devices. The author has an h-index of 48, co-authored 744 publications.
ORCID: 0000-0002-1331-6253Papers by this author
worksMillimeter-wave AlGaN/GaN HEMTs breakdown voltage enhancement by an air-bridge recessed source field plate (RSFP)
2019 · Solid-State Electronics · 14 citations
https://doi.org/10.1016/j.sse.2019.107629
Contrasting growth, physiological and gene expression responses of Clematis crassifolia and Clematis cadmia to different irradiance conditions
2019 · Scientific Reports · 10 citations
https://doi.org/10.1038/s41598-019-54428-z
Improved f<sub>max</sub> and breakdown voltage in AlGaN/GaN HEMT with plasma treatment
2018 · 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) · 7 citations
https://doi.org/10.1109/wipdaasia.2018.8734554
A new lattice-matched In <sub>0.17</sub> Al <sub>0.83</sub> N ∼ GaN based heterostructure IMPATT diode for terahertz application
2019 · Semiconductor Science and Technology · 5 citations
https://doi.org/10.1088/1361-6641/ab4786
A Novel Scalable Series MIM Capacitor Model for MMIC Applications
2019 · 4 citations
https://doi.org/10.1109/sslchinaifws49075.2019.9019775
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