A new lattice-matched In <sub>0.17</sub> Al <sub>0.83</sub> N ∼ GaN based heterostructure IMPATT diode for terahertz application
2019 · Semiconductor Science and Technology · 5 citations
https://doi.org/10.1088/1361-6641/ab4786
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146
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h-index
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Lin‐An Yang is an academic researcher from Xidian University. The author has contributed to research in topics: GaN-based semiconductor devices and materials & Semiconductor Quantum Structures and Devices & Semiconductor materials and devices. The author has an h-index of 19, co-authored 125 publications.
ORCID: 0000-0002-8437-0134https://doi.org/10.1088/1361-6641/ab4786
https://doi.org/10.1002/jccs.202400098
https://doi.org/10.1186/s40359-025-03777-8
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