Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures
1998 · Applied Physics Letters · 450 citations
https://doi.org/10.1063/1.122350
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Shigefusa F. Chichibu
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Shigefusa F. Chichibu is an academic researcher. The author has contributed to research in topics: GaN-based semiconductor devices and materials & Ga2O3 and related materials & ZnO doping and properties. The author has an h-index of 62, co-authored 516 publications.
ORCID: 0000-0001-9558-1642Papers by this author
worksEffects of ultra-high-pressure annealing on characteristics of vacancies in Mg-implanted GaN studied using a monoenergetic positron beam
2020 · Scientific Reports · 37 citations
https://doi.org/10.1038/s41598-020-74362-9
Dopant activation process in Mg-implanted GaN studied by monoenergetic positron beam
2021 · Scientific Reports · 25 citations
https://doi.org/10.1038/s41598-021-00102-2
Suppression of Green Luminescence of Mg‐Ion‐Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature
2019 · physica status solidi (b) · 19 citations
https://doi.org/10.1002/pssb.201900554
Roles of Al-vacancy complexes on the luminescence spectra of low dislocation density Si-doped AlN grown by halide vapor phase epitaxy
2025 · Applied Physics Letters · 4 citations
https://doi.org/10.1063/5.0252149
Power degradation mechanism of UV-C LEDs under current stress
2025 · 0 citations
https://doi.org/10.1117/12.3041549
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