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R

Ryo Tanaka

Fuji Electric (Japan)(JP)

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196

Papers

921

Citations

15

h-index

24

i10-index

Ryo Tanaka is an academic researcher from Fuji Electric (Japan). The author has contributed to research in topics: GaN-based semiconductor devices and materials & Semiconductor materials and devices & Crystallization and Solubility Studies. The author has an h-index of 15, co-authored 167 publications.

ORCID: 0000-0002-4058-7649

Research Topics

GaN-based semiconductor devices and materials Semiconductor materials and devices Crystallization and Solubility Studies X-ray Diffraction in Crystallography Adaptive Control of Nonlinear Systems

Papers by this author

works

Dopant activation process in Mg-implanted GaN studied by monoenergetic positron beam

2021 · Scientific Reports · 25 citations

https://doi.org/10.1038/s41598-021-00102-2

Akira Uedono Ryo Tanaka Shinya Takashima Katsunori Ueno

Density and energy level of near-interface trap estimated by analysis of threshold voltage shift due to positive bias stress in GaN planar MOSFETs with SiO<sub>2</sub> gate dielectric

2025 · Applied Physics Express · 0 citations

https://doi.org/10.35848/1882-0786/adbeb6

Yuki Ichikawa Katsunori UENO Tsurugi Kondo Ryo Tanaka

Research topics

topics

GaN-based semiconductor devices and materials

Semiconductor materials and devices

Crystallization and Solubility Studies

X-ray Diffraction in Crystallography

Adaptive Control of Nonlinear Systems

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