Physical and electrical characterizations of low n-doped MOCVD GaN-on-sapphire layers for power electronics applications
2025 · Power Electronic Devices and Components · 0 citations
https://doi.org/10.1016/j.pedc.2025.100100
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Adrien Bidaud
Institut d'électronique de microélectronique et de nanotechnologie(FR)
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Adrien Bidaud is an academic researcher from Institut d'électronique de microélectronique et de nanotechnologie. The author has contributed to research in topics: GaN-based semiconductor devices and materials & Ga2O3 and related materials & Semiconductor Quantum Structures and Devices. The author has an h-index of 1, co-authored 4 publications.
ORCID: 0009-0000-0845-2114Papers by this author
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