11.2 W/mm power density AlGaN/GaN high electron-mobility transistors on a GaN substrate
2024 · Journal of Semiconductors · 6 citations
https://doi.org/10.1088/1674-4926/45/1/012501
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69
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22
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Shaobo Dun is an academic researcher from Hebei Semiconductor Research Institute. The author has contributed to research in topics: GaN-based semiconductor devices and materials & Semiconductor materials and devices & Ga2O3 and related materials. The author has an h-index of 12, co-authored 59 publications.
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