Influence of Surface Passivation on AlN Barrier Stress and Scattering Mechanism in Ultra-thin AlN/GaN Heterostructure Field-Effect Transistors
2016 · Nanoscale Research Letters · 9 citations
https://doi.org/10.1186/s11671-016-1591-6
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Yuanjie Lv
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Yuanjie Lv is an academic researcher from Zhejiang Chinese Medical University. The author has contributed to research in topics: GaN-based semiconductor devices and materials & Ga2O3 and related materials & ZnO doping and properties. The author has an h-index of 30, co-authored 120 publications.
ORCID: 0000-0002-9207-8344Papers by this author
works11.2 W/mm power density AlGaN/GaN high electron-mobility transistors on a GaN substrate
2024 · Journal of Semiconductors · 6 citations
https://doi.org/10.1088/1674-4926/45/1/012501
GaN planar SBD grown and fabricated on SiC substrate with a cutoff frequency of 2.17 THz
2024 · Semiconductor Science and Technology · 4 citations
https://doi.org/10.1088/1361-6641/ad956a
High-quality β-(Al <i> <sub>x</sub> </i> Ga <sub>1-</sub> <i> <sub>x</sub> </i> ) <sub>2</sub> O <sub>3</sub> heteroepitaxy grown on (010) Ga <sub>2</sub> O <sub>3</sub> via MOCVD and transistor demonstration
2025 · Semiconductor Science and Technology · 0 citations
https://doi.org/10.1088/1361-6641/ae26c3
Rapid and Simple Detection of Mycobacterium avium subsp. paratuberculosis Using a Lateral Flow Assay Based on CRISPR-Cas12a Combined with Recombinase Polymerase Amplification or Nested PCR
2025 · Pathogens · 0 citations
https://doi.org/10.3390/pathogens15010024
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