/

Workspace

Research & Review

Writing & Publishing

Data & Analysis

Utilities

Account

User Settings

X

X. B. Mei

Northrop Grumman (United States)(US)

Claim or correct this author profile

Claim this profile or suggest corrections to the name, affiliation, bio, photo, or paper titles. Approved changes appear as verified CitedEvidence overlays.

116

Papers

2.9K

Citations

28

h-index

52

i10-index

X. B. Mei is an academic researcher from Northrop Grumman (United States). The author has contributed to research in topics: Radio Frequency Integrated Circuit Design & Superconducting and THz Device Technology & Semiconductor Quantum Structures and Devices. The author has an h-index of 28, co-authored 99 publications.

Research Topics

Radio Frequency Integrated Circuit Design Superconducting and THz Device Technology Semiconductor Quantum Structures and Devices Microwave Engineering and Waveguides Photonic and Optical Devices

Papers by this author

works

First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process

2015 · IEEE Electron Device Letters · 395 citations

https://doi.org/10.1109/led.2015.2407193

X. B. Mei Wayne Yoshida M. Lange Jane Lee

Sub 50 nm InP HEMT Device with Fmax Greater than 1 THz

2007 · 253 citations

https://doi.org/10.1109/iedm.2007.4419013

R. Lai X. B. Mei W.R. Deal Wayne Yoshida

A 0.85 THz Low Noise Amplifier Using InP HEMT Transistors

2015 · IEEE Microwave and Wireless Components Letters · 80 citations

https://doi.org/10.1109/lmwc.2015.2421336

K.M.K.H. Leong X. B. Mei Wayne Yoshida Po-Hsin Liu

Research topics

topics

Radio Frequency Integrated Circuit Design

Superconducting and THz Device Technology

Semiconductor Quantum Structures and Devices

Microwave Engineering and Waveguides

Photonic and Optical Devices

Chat about Author

Papers

Chat

Click to start Chat