The degradation mechanism of high power S-band AlGaN/GaN HEMTs under high temperature
2024 · Journal of Physics D Applied Physics · 0 citations
https://doi.org/10.1088/1361-6463/ad8455
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Tianying Yang is an academic researcher from Obstetrics and Gynecology Hospital of Fudan University. The author has contributed to research in topics: GaN-based semiconductor devices and materials & Silicon Carbide Semiconductor Technologies & Gestational Diabetes Research and Management. The author has an h-index of 1, co-authored 3 publications.
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