Quantum anomalous Hall effect in intrinsic magnetic topological insulator MnBi <sub>2</sub> Te <sub>4</sub>
2020 · Science · 1,548 citations
https://doi.org/10.1126/science.aax8156
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Zhongxun Guo
Fudan University(CN)
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Zhongxun Guo is an academic researcher from Fudan University. The author has contributed to research in topics: Magnetic properties of thin films & Topological Materials and Phenomena & 2D Materials and Applications. The author has an h-index of 15, co-authored 67 publications.
ORCID: 0000-0002-7084-2049Papers by this author
worksOn universal butterfly and antisymmetric magnetoresistances
2022 · Frontiers in Physics · 7 citations
https://doi.org/10.3389/fphy.2022.1068605
Ferromagnet-like binary switching of a Stoner–Wohlfarth antiferromagnet
2026 · Nature · 1 citations
https://doi.org/10.1038/s41586-025-10019-9
Quantized Topological States and Parity Anomaly in Intrinsic Quantum Anomalous Hall Insulator MnBi2Te4
2025 · ArXiv.org · 0 citations
High-Order Anisotropic Magnetoresistance in a Cubic Ferromagnet
2026 · Physical Review Letters · 0 citations
https://doi.org/10.1103/n518-jlf6
Unveiling the impact of anti-site defects in magnetic transitions of few-layer MnBi2Te4 by operando heating
2026 · arXiv (Cornell University) · 0 citations
https://doi.org/10.48550/arxiv.2602.07976
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