Van der Waals Heterostructure of Hexagonal Boron Nitride with an AlGaN/GaN Epitaxial Wafer for High-Performance Radio Frequency Applications
2021 · ACS Applied Materials & Interfaces · 23 citations
https://doi.org/10.1021/acsami.1c15970
D
Dong‐Seok Kim
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Dong‐Seok Kim is an academic researcher from Pohang University of Science and Technology. The author has contributed to research in topics: GaN-based semiconductor devices and materials & Semiconductor materials and devices & Ga2O3 and related materials. The author has an h-index of 18, co-authored 119 publications.
ORCID: 0000-0003-3113-4549Papers by this author
worksEffect of gate dielectrics on characteristics of high-energy proton-irradiated AlGaN/GaN MISHEMTs
2021 · Radiation Physics and Chemistry · 18 citations
https://doi.org/10.1016/j.radphyschem.2021.109473
Performance of AlGaN/GaN MISHFET using dual-purpose thin Al2O3 layer for surface protection and gate insulator
2014 · Solid-State Electronics · 13 citations
https://doi.org/10.1016/j.sse.2014.05.007
Activating NiO nanorods array via nitrogen ion implantation for enhanced alkaline hydrogen evolution
2024 · Chemical Engineering Journal · 12 citations
https://doi.org/10.1016/j.cej.2024.157385
Performance enhancement of GaN SB-MOSFET on Si substrate using two-step growth method
2011 · Microelectronic Engineering · 9 citations
https://doi.org/10.1016/j.mee.2011.03.119
Evaluation of thermomechanical behaviors of UO2-5 vol% Mo nuclear fuel pellets with sandwiched configuration
2020 · Journal of Nuclear Materials · 9 citations
https://doi.org/10.1016/j.jnucmat.2020.152295
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