High performance Si-MoS2 heterogeneous embedded DRAM
2024 · Nature Communications · 22 citations
https://doi.org/10.1038/s41467-024-54218-w
Fudan University(CN)
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Hui Xie is an academic researcher from Fudan University. The author has contributed to research in topics: Semiconductor materials and devices & Advancements in Semiconductor Devices and Circuit Design & Integrated Circuits and Semiconductor Failure Analysis. The author has an h-index of 2, co-authored 9 publications.
ORCID: 0009-0005-7444-184XClick to start Chat