https://doi.org/10.1002/smll.201904482
H
Hang Yang
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Hang Yang is an academic researcher from Guangxi University. The author has contributed to research in topics: 2D Materials and Applications & Graphene research and applications & Boron and Carbon Nanomaterials Research. The author has an h-index of 16, co-authored 48 publications.
ORCID: 0000-0002-5974-1175Papers by this author
worksBolometric Effect in Bi<sub>2</sub>O<sub>2</sub>Se Photodetectors
2019 · Small · 98 citations
Engineering ohmic-contacted zinc-phobic perovskite layer for ultra-stable zinc metal anode
2025 · Chemical Engineering Journal · 25 citations
https://doi.org/10.1016/j.cej.2025.164792
Room temperature ferroelectricity in monolayer graphene sandwiched between hexagonal boron nitride
2025 · Nature Communications · 10 citations
https://doi.org/10.1038/s41467-025-56065-9
Water‐Induced Bandgap Engineering in Nanoribbons of Hexagonal Boron Nitride
2023 · Advanced Materials · 9 citations
https://doi.org/10.1002/adma.202303198
Structural evolution and electronic properties of doped boron clusters Ta2B (n = 10 ∼ 20): Ta2B16 and Ta2B18 with strong aromaticity
2023 · Results in Physics · 6 citations
https://doi.org/10.1016/j.rinp.2023.106223
Unveiling the synergistic impact of asymmetric oxygen doping and biaxial strain on the photoelectric properties of GaSe/MoS2 heterojunctions: A first-principles study
2025 · Physica B Condensed Matter · 4 citations
https://doi.org/10.1016/j.physb.2025.417583
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