Voltage tuneable terahertz emission from a ballistic nanometer InGaAs∕InAlAs transistor
2005 · Journal of Applied Physics · 146 citations
https://doi.org/10.1063/1.1861140
J
J. Łusakowski
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J. Łusakowski is an academic researcher from University of Warsaw. The author has contributed to research in topics: Semiconductor Quantum Structures and Devices & Terahertz technology and applications & Quantum and electron transport phenomena. The author has an h-index of 21, co-authored 158 publications.
ORCID: 0000-0003-3243-4201Papers by this author
worksMagnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors
2005 · Journal of Applied Physics · 83 citations
https://doi.org/10.1063/1.1921339
Field Effect Transistors for Terahertz Detection and Emission
2010 · Journal of Infrared Millimeter and Terahertz Waves · 45 citations
https://doi.org/10.1007/s10762-010-9647-7
Alternating current magnetoresistance for determination of electron mobility and concentration under the gate in submicrometer Si and GaN field effect transistors
2011 · HAL (Le Centre pour la Communication Scientifique Directe) · 0 citations
Terahertz emission by plasma waves in high electron mobility transistors
2005 · HAL (Le Centre pour la Communication Scientifique Directe) · 0 citations
Comparison of silicon versus III-V semiconductor material choice for terahertz imaging with fast field effect transistors based detectors
2009 · HAL (Le Centre pour la Communication Scientifique Directe) · 0 citations
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