SF6 plasma treatment for leakage current reduction of AlGaN/GaN heterojunction field-effect transistors
2018 · Results in Physics · 6 citations
https://doi.org/10.1016/j.rinp.2018.06.009
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31
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296
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10
h-index
12
i10-index
Hyun‐Seop Kim is an academic researcher from Kunsan National University. The author has contributed to research in topics: GaN-based semiconductor devices and materials & Ga2O3 and related materials & Semiconductor materials and devices. The author has an h-index of 10, co-authored 27 publications.
ORCID: 0000-0002-0272-0576Click to start Chat