Area-Selective Atomic Layer Deposition Using Si Precursors as Inhibitors
2018 · Chemistry of Materials · 127 citations
https://doi.org/10.1021/acs.chemmater.8b02774
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Bonggeun Shong
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136
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h-index
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Bonggeun Shong is an academic researcher from Seoul Semiconductor (South Korea). The author has contributed to research in topics: Semiconductor materials and devices & Electronic and Structural Properties of Oxides & Catalytic Processes in Materials Science. The author has an h-index of 30, co-authored 116 publications.
ORCID: 0000-0002-5782-6300Papers by this author
worksMolecular Adsorption of NH3 and NO2 on Zr and Hf Dichalcogenides (S, Se, Te) Monolayers: A Density Functional Theory Study
2020 · Nanomaterials · 31 citations
https://doi.org/10.3390/nano10061215
Gradient area-selective deposition for seamless gap-filling in 3D nanostructures through surface chemical reactivity control
2022 · Nature Communications · 30 citations
https://doi.org/10.1038/s41467-022-35428-6
Surface Energy Change of Atomic-Scale Metal Oxide Thin Films by Phase Transformation
2020 · ACS Nano · 17 citations
https://doi.org/10.1021/acsnano.9b07430
Neighbour-sensitized near-infrared emission of new Nd(<scp>iii</scp>) and Er(<scp>iii</scp>) complexes with 1-(anthracene-2-yl)-4,4,4-trifluoro-1,3-butanedione
2016 · New Journal of Chemistry · 13 citations
https://doi.org/10.1039/c6nj00999a
Small and Simple Molecular Structure Based Thermally Stable Ruthenium Precursor in Advancing Ruthenium ALD Process for Scaled Interconnect Metallization
2025 · Advanced Science · 2 citations
https://doi.org/10.1002/advs.202519209
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