AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources
2010 · Journal of Applied Physics · 157 citations
https://doi.org/10.1063/1.3291101
A
A. El Fatimy
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A. El Fatimy is an academic researcher from Central European Institute of Technology. The author has contributed to research in topics: Terahertz technology and applications & Semiconductor Quantum Structures and Devices & Graphene research and applications. The author has an h-index of 23, co-authored 102 publications.
ORCID: 0000-0001-6500-7762Papers by this author
worksGraphene/Phosphorene nano-heterostructure as a potential anode material for (K/Na)-ion batteries: Insights from DFT and AIMD
2021 · Computational Materials Science · 69 citations
https://doi.org/10.1016/j.commatsci.2021.110936
Terahertz imaging with GaAs field-effect transistors
2008 · Electronics Letters · 61 citations
https://doi.org/10.1049/el:20080172
Field Effect Transistors for Terahertz Detection and Emission
2010 · Journal of Infrared Millimeter and Terahertz Waves · 45 citations
https://doi.org/10.1007/s10762-010-9647-7
Plasma wave field effect transistor as a resonant detector for 1 terahertz imaging applications
2009 · Optics Communications · 32 citations
https://doi.org/10.1016/j.optcom.2009.04.054
Optimizing corrosion protection: Performance comparison of Zn and Zn-Al-Mg alloys Hot-Dip galvanized coatings
2024 · Journal of Alloys and Compounds · 25 citations
https://doi.org/10.1016/j.jallcom.2024.176371
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