Photoresponsive and Gas Sensing Field-Effect Transistors based on Multilayer WS2 Nanoflakes
2014 · Scientific Reports · 429 citations
https://doi.org/10.1038/srep05209
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Nengjie Huo
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Nengjie Huo is an academic researcher from South China Normal University. The author has contributed to research in topics: 2D Materials and Applications & Perovskite Materials and Applications & MXene and MAX Phase Materials. The author has an h-index of 40, co-authored 123 publications.
ORCID: 0000-0003-2520-6243Papers by this author
worksUltrasensitive all-2D MoS2 phototransistors enabled by an out-of-plane MoS2 PN homojunction
2017 · Nature Communications · 238 citations
https://doi.org/10.1038/s41467-017-00722-1
Improved photodetection performance enabled by gradient alloyed quantum dots
2021 · APL Materials · 14 citations
https://doi.org/10.1063/5.0061643
Photovoltage junction memtransistor for optoelectronic in-memory computing
2024 · Journal of Materials Chemistry C · 5 citations
https://doi.org/10.1039/d4tc03015j
Controllable growth of MoO3 dielectrics with sub-1 nm equivalent oxide thickness for 2D electronics
2025 · Nature Communications · 5 citations
https://doi.org/10.1038/s41467-025-61972-y
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