https://doi.org/10.1088/1361-6463/aba64c
S
Sylvia Hagedorn
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93
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1.9K
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21
h-index
40
i10-index
Sylvia Hagedorn is an academic researcher from Ferdinand-Braun-Institut. The author has contributed to research in topics: GaN-based semiconductor devices and materials & Ga2O3 and related materials & ZnO doping and properties. The author has an h-index of 21, co-authored 80 publications.
ORCID: 0000-0001-6252-9426Papers by this author
worksThe 2020 UV emitter roadmap
2020 · Journal of Physics D Applied Physics · 493 citations
Tripling the light extraction efficiency of a deep ultraviolet LED using a nanostructured p-contact
2022 · Scientific Reports · 12 citations
https://doi.org/10.1038/s41598-022-15499-7
AlGaN/AlN heterostructures: an emerging platform for integrated photonics
2025 · npj Nanophotonics · 11 citations
https://doi.org/10.1038/s44310-024-00048-z
Influence of the AlN-sapphire template on the optical polarization and efficiency of AlGaN-based far-UVC micro LED arrays
2024 · Semiconductor Science and Technology · 3 citations
https://doi.org/10.1088/1361-6641/ad9fa0
Author Correction: Skin tolerant inactivation of multiresistant pathogens using far-UVC LEDs
2022 · Scientific Reports · 1 citations
https://doi.org/10.1038/s41598-022-11796-3
Spatial correlation of defect-selective etching and dark luminescence spots in Al <sub>x</sub> Ga<sub>1−x </sub>N
2024 · Semiconductor Science and Technology · 0 citations
https://doi.org/10.1088/1361-6641/ad5040
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