Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique
2014 · CrystEngComm · 97 citations
https://doi.org/10.1039/c3ce42266f
S
Si‐Young Bae
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Si‐Young Bae is an academic researcher from Pukyong National University. The author has contributed to research in topics: GaN-based semiconductor devices and materials & ZnO doping and properties & Ga2O3 and related materials. The author has an h-index of 19, co-authored 82 publications.
ORCID: 0000-0002-8284-0649Papers by this author
worksInsight into the performance of multi-color InGaN/GaN nanorod light emitting diodes
2018 · Scientific Reports · 62 citations
https://doi.org/10.1038/s41598-018-25473-x
Heteroepitaxial growth of Ga2O3 thin films on nickel-nanodot-induced buffer layers for solar-blind ultraviolet photodetector applications
2024 · Journal of Alloys and Compounds · 6 citations
https://doi.org/10.1016/j.jallcom.2024.174811
Gallium oxide–metal interfaces: insights from density functional theory and photodetection performance evaluation
2025 · Materials Research Express · 3 citations
https://doi.org/10.1088/2053-1591/adc3ed
Improved thermal conductivity of Ga2O3 thin films grown on polished polycrystalline diamond by thermal annealing
2025 · Materials Science and Engineering B · 2 citations
https://doi.org/10.1016/j.mseb.2025.118243
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