p-NiO/n-GaN Heterostructure Diode for Temperature Sensor Application
2019 · IEEE Sensors Journal · 48 citations
https://doi.org/10.1109/jsen.2019.2939045
T
Taofei Pu
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45
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744
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16
h-index
22
i10-index
Taofei Pu is an academic researcher. The author has contributed to research in topics: GaN-based semiconductor devices and materials & Ga2O3 and related materials & ZnO doping and properties. The author has an h-index of 16, co-authored 39 publications.
ORCID: 0000-0002-8964-7518Papers by this author
worksGaN Schottky barrier diode with thermally stable nickel nitride electrode deposited by reactive sputtering
2018 · Materials Science in Semiconductor Processing · 15 citations
https://doi.org/10.1016/j.mssp.2018.12.018
GaN Schottky barrier diodes with nickel nitride anodes sputtered at different nitrogen partial pressure
2019 · Vacuum · 15 citations
https://doi.org/10.1016/j.vacuum.2019.01.030
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