A 22nm high performance and low-power CMOS technology featuring fully-depleted tri-gate transistors, self-aligned contacts and high density MIM capacitors
2012 · 749 citations
https://doi.org/10.1109/vlsit.2012.6242496
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2
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A. Blattner is an academic researcher from Intel (United States). The author has contributed to research in topics: Semiconductor materials and devices & Advancements in Semiconductor Devices and Circuit Design & Advancements in Photolithography Techniques. The author has an h-index of 2, co-authored 2 publications.
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