Pristine PN junction toward atomic layer devices
2022 · Light Science & Applications · 45 citations
https://doi.org/10.1038/s41377-022-00814-8
H
Hangyu Xu
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11
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Hangyu Xu is an academic researcher from Shandong University of Technology. The author has contributed to research in topics: 2D Materials and Applications & Advanced Memory and Neural Computing & Advancements in Battery Materials. The author has an h-index of 11, co-authored 29 publications.
ORCID: 0000-0002-8204-161XPapers by this author
worksFloating gate photo-memory devices based on van der Waals heterostructures for neuromorphic image recognition
2023 · Applied Physics Letters · 24 citations
https://doi.org/10.1063/5.0157710
Critical band-to-band-tunnelling based optoelectronic memory
2025 · Light Science & Applications · 15 citations
https://doi.org/10.1038/s41377-025-01756-7
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