Gate-recessed AlGaN-GaN HEMTs for high-performance millimeter-wave applications
2005 · IEEE Electron Device Letters · 130 citations
https://doi.org/10.1109/led.2005.848107
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12
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281
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6
h-index
4
i10-index
J.S. Moon is an academic researcher from HRL Laboratories (United States). The author has contributed to research in topics: GaN-based semiconductor devices and materials & Semiconductor Quantum Structures and Devices & Radio Frequency Integrated Circuit Design. The author has an h-index of 6, co-authored 11 publications.
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