Engineering Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films by Epitaxial Stress
2019 · ACS Applied Electronic Materials · 189 citations
https://doi.org/10.1021/acsaelm.9b00256
I
Ignasi Fina
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Ignasi Fina is an academic researcher from Institut de Ciència de Materials de Barcelona. The author has contributed to research in topics: Ferroelectric and Piezoelectric Materials & Multiferroics and related materials & Ferroelectric and Negative Capacitance Devices. The author has an h-index of 38, co-authored 144 publications.
ORCID: 0000-0003-4182-6194Papers by this author
worksFeatures of structure, magnetic state and electrodynamic performance of SrFe12−xInxO19
2021 · Scientific Reports · 161 citations
https://doi.org/10.1038/s41598-021-97684-8
Crystal and magnetic structures, magnetic and ferroelectric properties of strontium ferrite partially substituted with in ions
2019 · Journal of Alloys and Compounds · 122 citations
https://doi.org/10.1016/j.jallcom.2019.153412
Non-volatile optical switch of resistance in photoferroelectric tunnel junctions
2021 · Nature Communications · 66 citations
https://doi.org/10.1038/s41467-020-20660-9
Thermal evolution of ferroelectric behavior in epitaxial Hf0.5Zr0.5O2
2020 · Applied Physics Letters · 28 citations
https://doi.org/10.1063/5.0015547
Disentangling stress and strain effects in ferroelectric HfO2
2023 · Applied Physics Reviews · 26 citations
https://doi.org/10.1063/5.0172259
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