Structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics for a-IGZO thin-film transistors
2013 · Nanoscale Research Letters · 62 citations
https://doi.org/10.1186/1556-276x-8-18
Claim or correct this author profile
Claim this profile or suggest corrections to the name, affiliation, bio, photo, or paper titles. Approved changes appear as verified CitedEvidence overlays.
40
Papers
449
Citations
12
h-index
15
i10-index
Fa‐Hsyang Chen is an academic researcher from Kunshan Govisionox Optoelectronic (China). The author has contributed to research in topics: Thin-Film Transistor Technologies & Semiconductor materials and devices & Electronic and Structural Properties of Oxides. The author has an h-index of 12, co-authored 34 publications.
https://doi.org/10.1186/1556-276x-8-18
https://doi.org/10.1063/5.0194691
Click to start Chat