https://doi.org/10.1038/s41467-017-02237-1
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Shengyuan A. Yang
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Shengyuan A. Yang is an academic researcher from Hong Kong Polytechnic University. The author has contributed to research in topics: Topological Materials and Phenomena & Graphene research and applications & 2D Materials and Applications. The author has an h-index of 70, co-authored 351 publications.
ORCID: 0000-0001-6003-1501Papers by this author
worksEvidence for topological type-II Weyl semimetal WTe2
2017 · Nature Communications · 390 citations
Elemental Ferroelectricity and Antiferroelectricity in Group‐V Monolayer
2018 · Advanced Functional Materials · 233 citations
https://doi.org/10.1002/adfm.201707383
Two-dimensional ferroelectricity in a single-element bismuth monolayer
2023 · Nature · 215 citations
https://doi.org/10.1038/s41586-023-05848-5
Electronic, Dielectric and Plasmonic Properties of Two-Dimensional Electride Materials X2N (X=Ca, Sr): A First-Principles Study
2015 · Scientific Reports · 89 citations
https://doi.org/10.1038/srep12285
Observation of a topological nodal surface and its surface-state arcs in an artificial acoustic crystal
2019 · Nature Communications · 80 citations
https://doi.org/10.1038/s41467-019-13258-3
Anisotropic Quantum Confinement Effect and Electric Control of Surface States in Dirac Semimetal Nanostructures
2015 · Scientific Reports · 60 citations
https://doi.org/10.1038/srep07898
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