Stabilizing the ferroelectric phase in doped hafnium oxide
2015 · Journal of Applied Physics · 559 citations
https://doi.org/10.1063/1.4927805
O
Osami Sakata
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Osami Sakata is an academic researcher from Tokyo Institute of Technology. The author has contributed to research in topics: Ferroelectric and Piezoelectric Materials & Semiconductor materials and devices & Electronic and Structural Properties of Oxides. The author has an h-index of 51, co-authored 529 publications.
ORCID: 0000-0003-2626-0161Papers by this author
worksColossal barocaloric effects in plastic crystals
2019 · Nature · 417 citations
https://doi.org/10.1038/s41586-019-1042-5
Impact of mechanical stress on ferroelectricity in (Hf0.5Zr0.5)O2 thin films
2016 · Applied Physics Letters · 260 citations
https://doi.org/10.1063/1.4954942
The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film
2016 · Scientific Reports · 233 citations
https://doi.org/10.1038/srep32931
Efficient overall water splitting in acid with anisotropic metal nanosheets
2021 · Nature Communications · 222 citations
https://doi.org/10.1038/s41467-021-20956-4
Growth of (111)-oriented epitaxial and textured ferroelectric Y-doped HfO2 films for downscaled devices
2016 · Applied Physics Letters · 84 citations
https://doi.org/10.1063/1.4962431
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