InGaN/GaN edge emitting laser diodes using an epitaxial lateral overgrowth with a low-defect density area of more than 75%
2024 · Japanese Journal of Applied Physics · 2 citations
https://doi.org/10.35848/1347-4065/ad9e5d
H
Hsun–Ming Chang
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Hsun–Ming Chang is an academic researcher from University of California, Santa Barbara. The author has contributed to research in topics: GaN-based semiconductor devices and materials & Semiconductor Quantum Structures and Devices & 2D Materials and Applications. The author has an h-index of 6, co-authored 14 publications.
ORCID: 0000-0001-9341-7208Papers by this author
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