Low leakage and high blocking voltage GaN-on-GaN Schottky diode by TMAH surface treatment
2025 · Power Electronic Devices and Components · 0 citations
https://doi.org/10.1016/j.pedc.2025.100092
Commissariat à l'Énergie Atomique et aux Énergies Alternatives(FR)
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Vishwajeet Maurya is an academic researcher from Commissariat à l'Énergie Atomique et aux Énergies Alternatives. The author has contributed to research in topics: GaN-based semiconductor devices and materials & Semiconductor materials and devices & Semiconductor materials and interfaces. The author has an h-index of 3, co-authored 12 publications.
ORCID: 0000-0002-5708-0895Click to start Chat