Accurate evaluation of effective mobility in Si MOSFETs at cryogenic temperatures using the quasi-static <i>C–V</i> method
2025 · Japanese Journal of Applied Physics · 0 citations
https://doi.org/10.35848/1347-4065/adb4fa
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33
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190
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8
h-index
8
i10-index
Xueyang Han is an academic researcher from Tokyo University of Information Sciences. The author has contributed to research in topics: Semiconductor materials and devices & Advancements in Semiconductor Devices and Circuit Design & Advanced Photocatalysis Techniques. The author has an h-index of 8, co-authored 29 publications.
ORCID: 0000-0002-6651-1343Click to start Chat