Record-Low Thermal Boundary Resistance between Diamond and GaN-on-SiC for Enabling Radiofrequency Device Cooling
2021 · ACS Applied Materials & Interfaces · 113 citations
https://doi.org/10.1021/acsami.1c13833
S
Shubhra S. Pasayat
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Shubhra S. Pasayat is an academic researcher from University of Wisconsin–Madison. The author has contributed to research in topics: GaN-based semiconductor devices and materials & Ga2O3 and related materials & ZnO doping and properties. The author has an h-index of 15, co-authored 63 publications.
ORCID: 0000-0002-7371-9038Papers by this author
worksFully Relaxed, Crack-Free AlGaN with upto 50% Al Composition Grown on Porous GaN Pseudo-Substrate
2022 · Crystals · 5 citations
https://doi.org/10.3390/cryst12070989
3 kV monolithic bidirectional GaN HEMT on sapphire
2024 · Applied Physics Express · 4 citations
https://doi.org/10.35848/1882-0786/ad9b6a
High-efficiency UV-A lasers using GaN waveguides on native GaN substrates
2025 · 0 citations
https://doi.org/10.1117/12.3044327
High power (over 3W) 376nm III-nitride laser diode with unintentionally doped GaN waveguide
2025 · 0 citations
https://doi.org/10.1117/12.3042678
Full visible range emissions with ultra-high density InGaN/GaN quantum dots achieved by selective area growth
2025 · Journal of Crystal Growth · 0 citations
https://doi.org/10.1016/j.jcrysgro.2025.128180
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