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Article10.7567/ssdm.2003.d-9-3

Pulsed-source MOCVD HfO2 ultrathin film growth optimized by in situ ellipsometry monitoring

Yoshishige Tsuchiya,Masato Endoh,Shunri Oda-2003-01-01
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TL;DRAbstract

Among several potential materials, HfO2 is a promising candidate as an alternative gate dielectric for future CMOS devices in terms of its thermodynamic stability on Si and high dielectric constant (~25) [1]. Since the required equivalent oxide thickness after the 65 nm node era will be less than 1 nm, it is important to establish a reliable technique to fabricate and control such ultrathin films with atomic-scale precision. Pulsed-source metal-organic chemical vapor deposition (PS-MOCVD) is a potential technique to deposit the ultrathin films with good surface coverage and with large area uniformity. Furthermore, in situ optical growth monitoring technique was chosen for good reproducibility and good throughput [2]. In this paper, the preparation of HfO2 thin films by PS-MOCVD, combined with in situ ellipsometry monitoring of film growth, is discussed. 2. Experimental P-type Si (100) wafers were used as substrates. Hf[N(CH3)2]4 was used as the source for hafnium and was introduced to

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Among several potential materials, HfO2 is a promising candidate as an alternative gate dielectric for future CMOS devices in terms of its thermodynamic stability on Si and high dielectric constant (~25) [1]. Since the required equivalent oxide thickness after the 65 nm node era will be less than 1 nm, it is important to establish a reliable technique to fabricate and control such ultrathin films with atomic-scale precision. Pulsed-source metal-organic chemical vapor deposition (PS-MOCVD) is a potential technique to deposit the ultrathin films with good surface coverage and with large area uniformity. Furthermore, in situ optical growth monitoring technique was chosen for good reproducibility and good throughput [2]. In this paper, the preparation of HfO2 thin films by PS-MOCVD, combined with in situ ellipsometry monitoring of film growth, is discussed. 2. Experimental P-type Si (100) wafers were used as substrates. Hf[N(CH3)2]4 was used as the source for hafnium and was introduced to

Keywords

Materials scienceMetalorganic vapour phase epitaxyEllipsometryWaferChemical vapor depositionHafniumThin filmAnalytical Chemistry (journal)

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