Fabrication and thermoelectricity of La_{1-x}(Ca, RE)_{x}VO_{3}(⩽ x ⩽ 1) composition-spread films
TL;DRAbstract
La _{1-x} (Ca, RE) _x VO _3 (0⩽ x ⩽ 1) composition-spread films were fabricated successfully by Combinatorial Pulsed Laser Deposition (CPLD). The structures and thermoelectric (TE) properties of the films were evaluated paralelly by Concurrent X-ray Diffraction (CXRD) and Multi-channel Thermoelectric Measurement systems respectively. The CXRD (200) peaks of the composition-spread films changed linearly, which indicated that the composition-spread films formed solid solution in the whole composition range (0 ⩽ x ⩽ 1). The effects of oxygen content and the substitutions of Ca and rare earth (RE: Ce, Nd, Eu) ions on TE properties of LaVO _3 were also analysed respectively. There was little change in the Seebeck coefficients of LaVO _3 films grown at different growth temperatures, while the resistivity decreased with the enhance of the growth temperatures. The largest power factor (0.7 μW/cm K ^2 ) of LaVO _3 film was obtained at 800°C, while the valence of vanadium ion changed from 3+ to
Chat with Paper
AI Agents for this Paper
La _{1-x} (Ca, RE) _x VO _3 (0⩽ x ⩽ 1) composition-spread films were fabricated successfully by Combinatorial Pulsed Laser Deposition (CPLD). The structures and thermoelectric (TE) properties of the films were evaluated paralelly by Concurrent X-ray Diffraction (CXRD) and Multi-channel Thermoelectric Measurement systems respectively. The CXRD (200) peaks of the composition-spread films changed linearly, which indicated that the composition-spread films formed solid solution in the whole composition range (0 ⩽ x ⩽ 1). The effects of oxygen content and the substitutions of Ca and rare earth (RE: Ce, Nd, Eu) ions on TE properties of LaVO _3 were also analysed respectively. There was little change in the Seebeck coefficients of LaVO _3 films grown at different growth temperatures, while the resistivity decreased with the enhance of the growth temperatures. The largest power factor (0.7 μW/cm K ^2 ) of LaVO _3 film was obtained at 800°C, while the valence of vanadium ion changed from 3+ to
Keywords
Chat
Click to start Chat