Thin film wide bandgap semiconductors: Preparation, doping and characterization of structural and optoelectronic properties

TL;DRAbstract

Amorphous silicon-carbon alloy was first prepared by glow-discharge decomposition of $\\rm C\\sb2 H\\sb4$-SiH$\\sb4$ mixture by Anderson and Spear. Since doping of glow-discharge a-SiC:H films was first reported, several kinds of methods for doping amorphous semiconductors have been developed. These doping techniques are based on the use of toxic materials such as phosphine and diborane for n- and p-type materials. Therefore there has been a demand for another doping technique to avoid the use of these materials. In this study, it is attempted to dope amorphous silicon carbide films with aluminum by alternate cosputtering of SiC and Al-doped SiC. Structural and opt-electronic characteristics of Al-doped amorphous SiC films were studied. Recently, amorphous hydrogenated silicon carbonitride (a-SiCN:H) film has attracted a great deal of attentions as a candidate material for tribological applications. SiC-SiN does not exist naturally. Therefore studies on fundamental properties of SiCN i

Chat with Paper

AI Agents for this Paper