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Article10.1109/wcpec.1994.519985

Intrinsic microcrystalline silicon (μc-Si:H)-a promising new thin film solar cell material

J. Meier,S. Dubail,R. Flückiger,D. Fischer,H. Keppner,A. Shah-2002-12-17
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TL;DRAbstract

"Compensated" microcrystalline silicon is obtained by adding 8-20 ppm diborane in the plasma gas phase. p-i-n cells with such i-layers have increased infrared sensitivity when compared to a-Si:H p-i-n cells. The preparation of the world's first "mixed stacked" a-Si:H//spl mu/c-Si:H tandem cell with an initial efficiency of 9.1% is reported. The /spl mu/c-Si:H cells showed no degradation of the cell performance under intense light-soaking. Typical properties of the /spl mu/c-Si:H cell indicate that the electronic transport is dominated by the crystalline phase of the material.

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"Compensated" microcrystalline silicon is obtained by adding 8-20 ppm diborane in the plasma gas phase. p-i-n cells with such i-layers have increased infrared sensitivity when compared to a-Si:H p-i-n cells. The preparation of the world's first "mixed stacked" a-Si:H//spl mu/c-Si:H tandem cell with an initial efficiency of 9.1% is reported. The /spl mu/c-Si:H cells showed no degradation of the cell performance under intense light-soaking. Typical properties of the /spl mu/c-Si:H cell indicate that the electronic transport is dominated by the crystalline phase of the material.

Keywords

Materials scienceSiliconSolar cellMicrocrystallineMicrocrystalline siliconOptoelectronicsSilicon solar cellThin film solar cell

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