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The Role of Ion Bombardement during Deposition and Etchning in the SiH4H2/S(s) System: A Comparison between Experimental Results and Monte Carlo Computer Simulation

G. Ratz,R. Konwitchny,W. Moeller,S. Vepřek-1991-01-01-Max Planck Institute for Plasma Physics
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Keywords

Monte Carlo methodDeposition (geology)IonStatistical physicsMaterials scienceComputational physicsPhysicsNuclear engineering

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