Reliability of MIS transistors with plasma deposited Al2O3 gate dielectric film

doi:https://doi.org/10.26636/jtit.2001.1.37

Open AccessArticle10.26636/jtit.2001.1.37

Reliability of MIS transistors with plasma deposited Al2O3 gate dielectric film

J. Szmidt,A. Werbowy,E. Dusiński,Krzysztof Zdunek-2001-03-30-Journal of Telecommunications and Information Technology

TL;DRAbstract

The paper presents the parameters of MIS tran- sistors with plasma deposited thin film aluminum oxide gate insulator. Al2O3 films were synthesized by means of the low- energy, low-temperature reactive pulse plasma (RPP) method. Investigated transistors, with channel width to length (W/L) ratios of 200/10 [ mm/ mm] and 200/20 [ mm/ mm] were manu- factured in a standard microelectronic technological labora- tory. In order to determine the most important parameters of produced devices there were measured their electrical charac- teristics. The distribution of the threshold voltage values was studied on a representative set of over two hundred structures

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The paper presents the parameters of MIS tran- sistors with plasma deposited thin film aluminum oxide gate insulator. Al2O3 films were synthesized by means of the low- energy, low-temperature reactive pulse plasma (RPP) method. Investigated transistors, with channel width to length (W/L) ratios of 200/10 [ mm/ mm] and 200/20 [ mm/ mm] were manu- factured in a standard microelectronic technological labora- tory. In order to determine the most important parameters of produced devices there were measured their electrical charac- teristics. The distribution of the threshold voltage values was studied on a representative set of over two hundred structures

Keywords

Gate dielectricMaterials scienceReliability (semiconductor)OptoelectronicsThin-film transistorDielectricTransistorPlasma

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