Semiconductor materials and devices
6 works
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7
Papers
118
Citations
3
h-index
1
i10-index
G.J. Bae is an academic researcher from Samsung (South Korea). The author has contributed to research in topics: Semiconductor materials and devices & Advancements in Semiconductor Devices and Circuit Design & Fatigue and fracture mechanics. The author has an h-index of 3, co-authored 6 publications.
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