A novel strategy for GaN-on-diamond device with a high thermal boundary conductance
2022 · Journal of Alloys and Compounds · 38 citations
https://doi.org/10.1016/j.jallcom.2022.164076
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65
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819
Citations
18
h-index
33
i10-index
Haibo Yin is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: GaN-based semiconductor devices and materials & Ga2O3 and related materials & Semiconductor materials and devices. The author has an h-index of 18, co-authored 56 publications.
https://doi.org/10.1016/j.jallcom.2022.164076
https://doi.org/10.7567/1882-0786/aafa0e
https://doi.org/10.1088/1674-4926/24050027
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