Silicon Carbide Semiconductor Technologies
17 works
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26
Papers
109
Citations
7
h-index
3
i10-index
A. G. Tandoev is an academic researcher from Moscow Power Engineering Institute. The author has contributed to research in topics: Silicon Carbide Semiconductor Technologies & Semiconductor materials and interfaces & Advancements in Semiconductor Devices and Circuit Design. The author has an h-index of 7, co-authored 23 publications.
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