High-temperature operation of Al<sub>2</sub>O<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub> bi-layer gate stack GaN MOS-HEMT up to 450 °C with suppressed gate leakage
2024 · Japanese Journal of Applied Physics · 6 citations
https://doi.org/10.35848/1347-4065/ad8714