GaN-based semiconductor devices and materials
29 works
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34
Papers
1.6K
Citations
19
h-index
24
i10-index
R. Doradziński is an academic researcher from Freiberger Compound Materials (Germany). The author has contributed to research in topics: GaN-based semiconductor devices and materials & ZnO doping and properties & Ga2O3 and related materials. The author has an h-index of 19, co-authored 29 publications.
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