Nanorod epitaxial lateral overgrowth of a-plane GaN with low dislocation density
2009 · Applied Physics Letters · 27 citations
https://doi.org/10.1063/1.3158954
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Jenq Dar Tsay is an academic researcher from ITRI International. The author has contributed to research in topics: GaN-based semiconductor devices and materials & Ga2O3 and related materials & ZnO doping and properties. The author has an h-index of 2, co-authored 6 publications.
https://doi.org/10.1063/1.3158954
https://doi.org/10.1149/1.2913151
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