Robust low-temperature (350 °C) ferroelectric Hf0.5Zr0.5O2 fabricated using anhydrous H2O2 as the ALD oxidant
2022 · Applied Physics Letters · 13 citations
https://doi.org/10.1063/5.0126695
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Akshay Sahota is an academic researcher from The University of Texas at Dallas. The author has contributed to research in topics: Semiconductor materials and devices & Ferroelectric and Negative Capacitance Devices & Advanced Memory and Neural Computing. The author has an h-index of 6, co-authored 9 publications.
ORCID: 0000-0002-0609-1420https://doi.org/10.1063/5.0126695
https://doi.org/10.1002/pssr.202100053
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